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Ulrich Dahmen is Director of the National Center for Electron Microscopy. His current research interests include embedded nanostructures and interfaces in materials.
Embedded nanostructures. Size- and shape-dependence of structural phase transformations in solids. Orientation relationships, crystallographic symmetry, shapes and the role of defects in precipitation reactions and thin film growth. Electron microscopy characterization of morphology and interface structure by conventional, in-situ, high resolution and diffraction techniques and correlation with property measurements and computer image simulations.
Ulrich Dahmen obtained his Ph.D. in materials science from UC Berkeley in 1979, then joined Berkeley Lab in a postdoctoral position, and subsequently was named principal investigator and senior staff scientist. Since 1993, he has been head of the National Center for Electron Microscopy at Lawrence Berkeley National Laboratory. He also directs a research program on the crystallography of microstructures that uses transmission electron microscopy as a major tool for microstructural characterization. He has published extensively on the atomic structure of interfaces, phase transformations, the evolution of precipitate morphologies and the effects of size on the behavior of embedded particles. His activities on behalf of the materials and microscopy community include service on the editorial advisory board of several scientific journals, a term as director of physical sciences in the Microscopy Society of America, organization of numerous symposia at national and international meetings and the current scientific direction of the TEAM microscopy effort for the Department of Energy.
Peter Ercius focuses on three-dimensional imaging and analysis of nano-structures in the electron microscope with a focus on the application of advanced aberration correction in a scanning transmission electron microscope (STEM). He is exploring the capabilities of the transmission electron aberration-corrected microscopes (TEAM) microscopes at NCEM to advance the resolution of electron tomography to the atomic level with the possibility of element specificity. He also works on aberration correction in conventional TEM mode with a chromatic aberration corrector to investigate materials with atomic resolution.
Peter graduated from Cornell University with a B.S. in applied and engineering physics in 2003. He remained at Cornell and completed a Ph.D. in applied and engineering physics with Professor David Muller in 2009. His desertion project involved three-dimensional imaging of semiconductor devices using STEM. He then joined NCEM as a collaborative postdoctoral researcher for 2 years to implement electron tomography at the center while pushing the limits of three-dimensional analysis to atomic resolution. Peter is currently the staff scientist in charge of the dual aberration corrected TEAM I at NCEM, which has a DCOR probe corrector and CCOR chromatic-aberration image corrector. He collaborates with users of the center on a wide range of projects including S/TEM atomic resolution imaging, electron tomography and electron energy loss spectroscopy (EELS).
High resolution electron microscopy and its application to materials sciences. Development of robust, fast and quantitative techniques and methods to extend resolution to below 0.1 nm such as QUANTITEM or electron holography. Atomic structure of buried interfaces and boundaries in subsurface systems made from semiconductors or ceramics. Mapping of local compositional changes, local strain and local electromagnetic fields. Development and application of advanced high resolution electron beam tomography and techniques for aberration-corrected microscopy.
Dr. Christian Kisielowski is Staff Scientist and Principal Investigator at the National Center for Electron Microscopy (NCEM), Lawrence Berkeley National Laboratory, Berkeley CA 94720. He was awarded his PhD in natural sciences and his Habilitation in physics performing spectroscopic studies on defects in semiconductors at the University of Cologne / Germany in 1985 and 1990. Thereafter, he joined AT&T Bell Laboratories (1991 – 1994) where he established a new quantitative method for image analyses in High Resolution Electron Microscopy (QUANTITEM). From 1994 through 1997 he lead research efforts to develop GaN thin film growth by Molecular Beam Epitaxy at the University of California in Berkeley. Since 1997 he is Staff Scientist at the NCEM and responsible for the development and application of High Resolution Electron Microscopy. He was the first to demonstrate sub-Ångstrom resolution by phase contrast microscopy and has published over 150 articles concerning a large variety of materials with focus on semiconductors. Currently, his research interests include the implementation of the next generation electron microscopes (TEAM Project) and the development of electron tomography with atomic resolution.
Andrew Minor’s research focuses on developing and applying sample preparation methods for high resolution, analytical and in-situ electron microscopy, with the goal of overcoming current limitations in resolution, accuracy and detectability posed by the TEM sample itself. Application of focused ion beam instrumentation to nanoscale structures or devices for specific research projects in transmission electron microscopy. Development of new techniques and instrumentation such as nanoindentation, microscopy of soft matter and TEAM.
Experimental techniques to investigate size effects at small scales, nanoscale fabrication methods, and novel sample manipulation and preparation methods for electron microscopy investigations. These methods include silicon-based and focused ion micromachining of small structures, as well as advanced electron microscopy-based materials characterization of both organic and inorganic materials.
Dr Minor is in charge of the in situ and sample preparation effort at NCEM, including the FEI dual-beam Focused Ion Beam (FIB) and JEOL 3010 in situ TEM. He is also the scientific staff member in charge of the field emission SEM and sample preparation laboratories, and assists in and coordinates NCEM user instruction and research at these facilities. Dr. Minor received his Ph.D in Materials Science and Engineering from the University of California, Berkeley, in 2002.
(510) 486- 4564
SPLEEM (Spin Polarized Low Energy Electron Microscopy) for the study of surface and thin film magnetic microstructures and their dynamic behavior. In-situ investigations of growth and structure of thin films, effect of environmental factors (sample temperature, deposition flux, applied magnetic fields, etc.). Nanostructure self-assembly at surfaces. Development of new techniques and instrumentation.
Jim Ciston’s research interests focus on the determination of structure-performance relationships at surfaces and interfaces of semiconducting and oxide-supported catalytic materials for energy efficient fuel generation. He is also interested in the surface properties of nuclear energy materials in specific relationship to corrosion and environmental fate of their constituents. This work will utilize the state-of-the-art capabilities of the TEAM suite of instruments at the National Center for Electron Microscopy with particular emphasis on high resolution imaging and diffraction. He is also engaged in developing and applying new experimental techniques with the goal of direct, real space, plan-view imaging of surface atoms in insulating materials and nanostructures.
Dr. Ciston obtained his Ph.D. in Materials Science and Engineering from Northwestern University in 2009 for his work on the structural determination of hydrogen atom positions and bonding charge density at crystal surfaces through the use of advanced electron diffraction and high resolution imaging techniques. From 2009-2011, he was a Postdoctoral Research Associate at Brookhaven National Laboratory where he also served as the first facility manager for the FEI Titan aberration-corrected Environmental TEM at the Center for Functional Nanomaterials. During this time, Dr. Ciston utilized in-situ environmental microscopy to study the structure-chemistry relationships of catalytic oxide materials for photolysis of water and methane reforming reactions. He has received several awards for his research from the International Centre for Diffraction Data, International Federation of Societies for Microscopy, US National Committee for Crystallography, & Pittsburgh Diffraction Society, and has presented his research at seminars and conferences on four continents.
Colin works primarily on developing simulation and analysis methods and algorithms for high resolution and scanning transmission electron microscopy. He provides computational support to facility users for quantitative analysis of electron micrographs, and aims to close the gap between experimentally available data and theoretically accessible systems. He is currently writing several software packages to perform quantitative analysis on experimental data ranging from single micrographs to ultralarge datasets. He also performs first principle simulations including density functional theory and molecular dynamics simulations for a variety of materials science studies.
Colin received his PhD in Materials Engineering from the University of Alberta in Canada. There he studied the growth of polycrystalline and amorphous metal thin films with deposition experiments and simulations. He has used microfabrication techniques including physical and chemical vapor deposition, chemical etching, and optical and electron beam lithography. He is also proficient in analysis techniques including scanning and transmission electron microscopy, x-ray and neutron diffraction and reflectometry, and atomic force microscopy.
Tecnai, Libra, Titan
CM300 microscope, Specimen Preparation, 3010 insitu microscope
Computer Lab, FIB microscope, Photography, Building Manager
Structure-property relationships in engineering materials. Solid state phase transformations and interfaces. Alloy design for structural applications. Electron microscopy characterization of materials by conventional, high resolution, and diffraction techniques supported by computer image simulations.